AN EVALUATION TESTING TECHNIQUE OF SINGLE EVENT EFFECT USING BEAM BLANKING SEM

摘要

Beam Blanking SEM (Scanning Electron Microscope) testing technique has been applied to CMOS SRAM devices to evaluate the occurence of soft errors on memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion testing technique, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been found. The purpose of this study was to demonstrate that the application of focused pulsed electron beam could be a reliable, convenient and inexpensive tool to investigate the effects of heavy ions and high energy particles on memory devices for space application.