HF/O3 Based Cleaning and Drying of Si Wafers toGuarantee High Cleanliness

摘要

A new wet cleaning and drying procedure characterized by very simplifiedrnprocess steps is presented.rnThe complete cleaning and drying procedure which is based on dilutedrnhydrofluoric acid (dHF) and ozone needs only three process steps. Selectedrnexamples demonstrate that using this procedure meets and exceeds currentrnrequirements of metal concentrations and particle counts on silicon wafers.rnThe results were obtained with none or slightly structured wafers. Inrncomparison with competing RCA processes space requirement and chemistryrnconsumption are reduced by up to 60%. Due to the short process sequence,rntypically about 10 minutes and the use of diluted chemicals, a cleaning andrndrying system based on this procedure is space saving, cost efficient to runrnand suitable for high throughput.