首页> 外文会议>International Federation for Heat Treatment and Surface Engineering Congress vol.2; 20041026-28; Shanghai(CN) >Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering
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Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

机译:MW-ECR等离子增强磁控溅射制备氮化碳膜的化学结构

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摘要

Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C_3N_4, and the bonding is predominantly of C-N type.
机译:使用孪生微波电子回旋共振等离子体源,通过等离子体增强的直流磁控溅射制备非晶态氮化碳薄膜。使用X射线光电子能谱和傅立叶变换红外光谱法研究了沉积膜的化学结构。结果表明,沉积速率受直流偏压的强烈影响,薄膜主要由单晶的非晶碳氮化物相组成,N / C比接近C_3N_4,且键合主要为C-N型。

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