Surface morphology studies on carbon nitride films prepared by rf magnetron sputtering

摘要

A series of amorphous carbon nitride (a-C:N) films have been deposited on silicon wafer substrates at different rf powers. Fourier Transform Infrared Absorption (FTIR) results indicated that nitrogen atoms are effectively incorporated in the amorphous network of these films. Atomic Force Microscopy (AFM) images have shown that a larger cluster size and a rougher surface developed in films prepared at higher rf-input power. This also affected the concentration of the incorporated nitrogen in the films.