Correlation between crystalline qualities and resistive switching effects of La_(0.7)Sr_(0.3)MnO_3 films

机译：La_（0.7）Sr_（0.3）MnO_3薄膜的晶体质量与电阻转换效应的相关性

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In this work, La_(0.7)Sr_(0.3)MnO_3 (LSMO) thin films have been prepared on Pt/Ti/SiO_2/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (Ⅰ-Ⅴ) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.

机译：在这项工作中，已通过脉冲激光沉积（PLD）方法在不同衬底温度下在Pt / Ti / SiO_2 / Si衬底上制备了La_（0.7）Sr_（0.3）MnO_3（LSMO）薄膜。在所有Ag / LSMO / Pt异质结构中均观察到非线性电流-电压（Ⅰ-Ⅴ）行为和电脉冲引起的电阻变化。电阻开关特性对薄膜的晶体质量有很强的依赖性。此外，还提出了解释结果的模型。

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来源
《International Conference on Thin Film Physics and Applications; 20070925-28; Shanghai(CN)》|2007年|P.iv|共2页
会议地点 Shanghai(CN)
作者
Feng Wu; Xiaomin Li; Weidong Yu; Yiwen Zhang; Xun Cao;
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作者单位

Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Ding Xi Road, Shanghai, China 200050;

Graduate School of Chinese Academy of Science, Beijing, China 100039;

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会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词
pulsed laser deposition; manganites; resistive switching; non-volatile memories;

机译：脉冲激光沉积；锰矿；电阻切换；非易失性存储器;
入库时间 2022-08-26 14:21:46

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2. Effect of La~(3+) substitution with Gd~(3+) on the resistive switching properties of La_(0.7)Sr_(0.3)MnO_3 thin films [J] . Hong-Sub Lee, Chang-Sun Park, Hyung-Ho Park Applied Physics Letters . 2014,第19期

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4. Correlation between crystalline qualities and resistive switching effects of La_(0.7)Sr_(0.3)MnO_3 films [C] . Feng Wu, Xiaomin Li, Weidong Yu, International Conference on Thin Film Physics and Applications . 2008

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机译：巨磁阻La（0.7）Ca（0.3）mnO（3）和La（0.7）sr（0.3）mn0（3）薄膜中半金属铁磁性的隧穿证据

Correlation between crystalline qualities and resistive switching effects of La_(0.7)Sr_(0.3)MnO_3 films

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