Electrostatic Discharge Protection in the Nano-Technology - Will We be able to Provide ESD Protection in the Future?

摘要

Electrostatic Discharge (ESD) phenomenon will play a critical role in the introduction, manufacturing and implementation of present day semiconductor devices and future nano-structures [1]. In the future, the ability to produce nanostructures may be limited by the ESD sensitivity of these electronic and mechanical elements. The ESD Technology Roadmap will be shown, highlighting a decreasing ESD robustness with technology scaling. ESD technology scaling issues in advanced CMOS, RF CMOS, silicon germanium, to gallium arsenide will be reviewed. ESD issues from wafer-level charging, on-chip protection, to off-chip protection will be discussed. In addition trends in RF MEMs, FINFETs, magnetic recording, photo-masks to Carbon Nano-tubes (CNT) will be discussed.