Effects of Strain on the Electron Mobility in SOI Si-MOSFET

摘要

There are several reports on the enhancement of low field electron mobility in SOI thin-film fully depleted Si-MOSFET. Now this behavior is attribute to channel inversion layer broadening and reduced sio_2/si interface scattering with the reduction of transverse electric field in SOI MOSFET. In this short paper, the tensile strain existed in the surface Si layer of SOI structure and its effects on the mobility behavior of SOI n-MOSFET is discussed.