MOS CHARACTERISTICS OF N_2O-GROWN AND NO-ANNEALED OXYNITRIDES

摘要

A new technique of MOSFET gate dielectric formation by rapid thermal oxidation is proposed. Gate oxynitride was first grown in N_2O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a higher nitrogen accumulation at the Si/SiO_2 interface than either pure N_2O oxynitride or nitridation of SiO_2 in the NO ambient It is also applicable to a wide range of oxide thickness because the initial rapid thermal N_2O oxidation rate is not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and sugnificant resistance to interface state generation under electrical stress.