FABRICATION OF ULTRA-SMALL DIMENTION SI_(1-x) GE_x WIRES IN SI USING PULSED LASER INDUCED EPITAXY

摘要

Direct writing of sub-micron Si_(1-x)Ge_x wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si_(1-x)Ge_x bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.