首页> 外文会议>International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN) >SCANNING PROBE MICROSCOPY APPLICATIONS TO CHARACTERIZATION IN MICROELECTRONICS
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SCANNING PROBE MICROSCOPY APPLICATIONS TO CHARACTERIZATION IN MICROELECTRONICS

机译:扫描探针显微镜在微电子表征中的应用

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In this paper,we simply introduce the theory of Scanning Tunnelling Microscopy ( STM ) and Atomic Force Microscopy ( AFM ).Then we investigate the morphology and structure of read-only memory ( ROM ) in Ultra-Large-Scale-Integration ( ULSI ).Structural parameters of ROM,both horizontal and vertical,are measured precisely.Also,we put AFM into observation of polycrystalline silicon surface with cloud defect.By comparison,we also observed the surface of polycrystalline silicon without cloud defect.We found the cloud polycrystalline silicon surface was formed by pits with different sizes.But the normal polycrystalline silicon surface was not.Our experiments show that SPM is a powerful tool for characterization in microelectronics.
机译:本文仅介绍了扫描隧道显微镜(STM)和原子力显微镜(AFM)的理论。然后,我们研究了超大规模集成(ULSI)中只读存储器(ROM)的形态和结构。精确测量ROM的结构参数(水平和垂直)。还将AFM应用于观察有云缺陷的多晶硅表面。通过比较,我们还观察了无云缺陷的多晶硅表面。我们发现了云多晶硅表面是由尺寸不同的凹坑形成的,但普通的多晶硅表面却没有。我们的实验表明,SPM是微电子表征的强大工具。

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