SIMULATION OF ION IMPLANTATION USING THE FOUR-PARAMETER KAPPA DISTRIBUTION FUNCTION

摘要

A two-dimensional model for the simulation of ion implantation into arbitrary geometries has been developed. The four-parameter kappa distribution function was introduced the first time in semiconductor technology to describe the vertical dopant profile of implanted ions. Owing to the low computational effort and the short simulation time the given method is an alternative to modern Monte Carlo simulations for ion implantation processes.