EPITAXIAL GROWTH OF CoSi_2 BY Co/Ti/Si SOLID PHASE REACTION AND ITS APPLICATION IN SALICIDE TECHNOLOGY

摘要

Co/Ti/Si ternary solid phase interaction is a new method of CoSi_2/Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi_2 on Si substrate, self-aligned silicidation of source/drain contact and polysilicon gate by Co/Ti/Si solid phase reaction, and applications of the new salicide technology in device fabrication are described and discussed.