0.2 μm LDD NMOSFETS FABRICATED BY CONVENTIONAL OPTICAL LITHOGRAPHY

摘要

To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effect which are most important in deep sub micron devices, and remains the high current driving ability.