CARBON-DOPED HBTs FOR OEICs

机译：OEIC的碳掺杂HBT

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Carbon base doping for high performance HBTs promises higher reliability, but the growth techniques must be optimized so that the hydrogen passivation of C acceptors inherent in suitable epitaxial growth techniques does not degrade device performance. Recent results are discussed in this paper.

机译：高性能HBT的碳基掺杂有望带来更高的可靠性，但必须优化生长技术，以便合适的外延生长技术中固有的C受体氢钝化不会降低器件性能。本文讨论了最近的结果。

著录项

来源
《International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN)》|1995年|P.100|共1页
会议地点 Beijing(CN)
作者
G. E. STILLMAN; M. FENG; M.A. FRESINA; Q.J. HARTMANN; D.A. AHMARI; P.J. MARES; S. THOMAS; S.A. STOCKMAN; S.L. JACKSON;
展开▼
作者单位

Department of Electrical and Computer Engineering University of Illinois at Urbana - Champaign;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体集成电路（固体电路）;
关键词

相似文献

外文文献
中文文献
专利

1. Source of Low Frequency Noise in SiGe HBTs [J] . WANG Kai, LIU Yuan, DENG Wan-Ling 东华大学学报（英文版） . 2015,第006期
2. A Hybrid Evolutionary Modeling/Optimization Technique for Collector-Up/Down HBTs in RFIC and OEIC Modules [J] . Tseng H.-C. IEEE Transactions on Advanced Packaging . 2007,第4期

机译：RFIC和OEIC模块中上/下集电极HBT的混合进化建模/优化技术
3. Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion [J] . Y.K. Su, W.B. Chen, C.L. Lin, Solid-State Electronics . 2003,第11期

机译：通过氢横向扩散消除掺碳InGaP / GaAs HBT中的老化效应
4. Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress [J] . Kurishima K., Yamahata S. IEEE Electron Device Letters . 1998,第8期

机译：偏压和温度应力下碳掺杂InP / InGaAs HBT中基极-发射极结的初始降解
5. Carbon-doped HBTs for OEICs [C] . Stillman, G.E., Feng, . 1995

机译：OEIC的碳掺杂HBT
6. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
7. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
8. Heavily carbon-doped GaAsSb grown on InP for HBT applications [O] . S. P. Watkins, O. J. Pitts, C. Dale, 2008

机译：在InP上生长用于HBT的重掺杂碳的GaAsSb
9. OEIC Ultra. A New Approach to OEIC CAD [R] . Amantea, R. 1994

机译：OEIC Ultra。一种新的OEIC CaD方法

CARBON-DOPED HBTs FOR OEICs

摘要

著录项

相似文献

相关主题

期刊订阅