Hydrogen Diffusion and Redistribution in PECVD Si-Rich Silicon Nitride during Rapid Thermal Annealing

摘要

We have studied hydrogen release and movement in Si-rich PECVD nitride films as a result of a Rapid Thermal Anneal (RTA) process at varying temperatures. Combined with FTIR and Hydrogen Forward Spectrum, we studied the changes of hydrogen concentration and bonding configuration of the silicon nitride during RTA. We have found that during RTA some of NH bonds are converted to SiH bonds as well as hydrogen out diffusion from both SiH and NH bonds. Hydrogen diffusion coefficients of the silicon nitride are determined