High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

摘要

Abstract: We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al$-2$/O$-3$/ and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.!11