Electronic properties of grown-in defects in semi-insulating GaAs

机译：半绝缘GaAs中缺陷的电子性质

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Abstract: Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.!14

机译：摘要：使用高分辨率光诱导瞬态光谱法比较了不同供应商生产的半绝缘GaAs衬底的缺陷结构。检测到许多与天然缺陷和金属杂质有关的缺陷中心，并估计了这些中心的浓度！14

著录项

来源
《International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology》|1998年|p.209-213|共5页
会议地点 Zakopane(PL);Zakopane(PL);Zakopane(PL)
作者
Roman Kozlowski; Institute of Electronic Materials Technology; Warsaw; Poland; Michal Pawlowski; Military Univ. of Technology; Warsaw; Poland; Pawet Kaminski; Institute of Electronic Materials Technology; Warsaw; Poland; J.Cwirko; Military Univ. of Techno;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
入库时间 2022-08-26 14:03:06

相似文献

外文文献
中文文献
专利

1. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing [J] . C. Dion, P. J. Poole, S. Raymond, Applied Physics Letters . 2006,第13期

机译：使用生长缺陷介导的混合来调节自组装InAs / InP（001）量子点的电子性质
2. Effect of the V_(As)V_(Ga) complex defect doping on properties of the semi-insulating GaAs [J] . Deming Ma, Hongbo Qiao, Wei Shi, Journal of Applied Physics . 2014,第15期

机译：V_（As）V_（Ga）复合缺陷掺杂对半绝缘GaAs性能的影响
3. Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics [J] . Jun Xia, Andreas Mandelis Journal of Applied Physics . 2009,第10期

机译：半绝缘GaAs中缺陷状态的深层光热光谱中的扩展效应和遍历性：缺陷状态动力学的温度，脉冲速率和时域组合研究
4. Electronic properties of grown-in defects in semi-insulating GaAs [C] . Roman Kozlowski, Michal Pawlowski, Pawet Kaminski, International conference on solid state crystals . 1999

机译：半绝缘GaAs中成长缺陷的电子性质
5. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions. [D] . Karow, Matthias. 2014

机译：InGaAs / GaAs多量子阱中的缺陷产生：晶体和光学特性与外延生长条件的相关性。
6. The electronic and optical properties of quaternary GaAs1-x-yNxBiy alloy lattice-matched to GaAs: a first-principles study [O] . Xiaoyang Ma, Dechun Li, Shengzhi Zhao, 2014

机译：四元GaAs1-x-y的电子和光学性质ñX双ÿ 与GaAs晶格匹配的合金：第一性原理研究
7. Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally Stimulated Current Measurements [O] . Look, David C., Fang, Z-Q., Hemsky, Joseph W., 2012

机译：通过归一化热激励电流测量识别半绝缘GaAs中的电子辐照缺陷
8. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques [R] . Li, S. S. 1985

机译：LpE和mOCVD技术生长Gaas和al（x）Ga（1-x）as外延薄膜生长参数的研究

Electronic properties of grown-in defects in semi-insulating GaAs

摘要

著录项

相似文献

相关主题

期刊订阅