Micro-Raman investigation of growth-induced defects in 6H and 4H SiC crystals grown by sublimation method

摘要

We present experimental results regarding to the evaluation of growth-induced defects in 6H and 4H SiC crystals grown by sublimation method, and these defects are characterized by using micro-Raman spectroscopy. From Raman results, we could reveal the stacking disorders related to strain which occurs along the boundary position of planar defects and micropipes in 6H SiC crystals. Also, we found the 15R was generated due to the change of stacking sequence from 4H to 15R during crystal growth because the 15R formation area is adjacent to 4H, considering the relation between formation probability and temperature.