Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

摘要

In this paper, our latest results in high voltage DiMOSFETs in 4H-SiC with active areas of up to 0.103 cm~2 (3.3 mm x 3.3 mm) are presented. The MOSFETs showed a MOS channel mobility of 22 cm~2/V-s and a threshold voltage of 8.5 V. The DiMOSFETs exhibited an on-resistance of 42 mΩ·cm~2 at room temperature, which was shown to be scalable to larger devices. Stable avalanche characteristics at approximately 2.4 kV were measured. An on-current of 10A, which is the highest on-current measured on any normally-off SiC unipolar switch, with comparable blocking voltage reported to date, were observed from a 0.103 cm device. High switching speed, achieved using metallized gates, was demonstrated by an on-wafer dynamic measurement. A rise time of 165 ns and a fall time of 21 ns were observed, which suggests that the devices are suitable for high frequency, low loss switching applications up to 5 MHz.