Inverse modeling for C-V profiling of modulated-doped semiconductor structures

摘要

Inverse modeling is a way for the verification of device models and for the parameter extraction. A technique of doping profile extraction of semiconductor structures based on the capacitance-voltage measurements (or C-V profiling) is used extensively. This technique up till now has been applied in two variants: the well-known classical C-V profiling to the sufficiently smooth doping profiles and the inverse modeling technique based on the error minimization to the abrupt profiles. The present paper describes a new method of the inverse modeling with sub-Debye resolution for arbitrary doping profiles. The calculations can be performed using a Pentium-like personal computer. For the input data obtained by forward modeling, the integral error of doping profile extraction is below 0.1 %. As an example, the doping profile determination of the GaAs modulated-doped structure is presented. The possibilities of the proposed method are discussed.