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Self-Adapting Vertices for Mask-Layout Synthesis

机译:用于掩模布局合成的自适应顶点

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摘要

An efficient procedure for synthesizing MEMS mask-layouts for a desired 3-D shape is discussed. This method can greatly reduce the number of design and prototype iterations required to produce a desired device. The method is based on evolutionary algorithms, where the locations of vertices in the polygonal mask-layout are optimized, such that the resulting shape is 'closest' to the desired shape. This work has been extended here to include varying the number of vertices in the mask-layout polygon(s), to free the designer from having to make an initial estimate at the complexity of the mask-layout required. Preliminary results are presented.
机译:讨论了一种用于合成所需3D形状的MEMS掩模布局的有效程序。这种方法可以大大减少生产所需器件所需的设计和原型迭代次数。该方法基于进化算法,其中优化了多边形蒙版布局中顶点的位置,从而使所得形状“最接近”所需形状。此处的工作已扩展为包括更改遮罩布局多边形中的顶点数量,以使设计人员不必对所需的遮罩布局复杂性进行初步估算。初步结果已经提出。

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