Characteristics of the Localized Interface Optical-phonon Modes in Triple-constitution Superlattices with Defect Layers

摘要

In the framework of dielectric continuum theory and applying transfer matrix method, we study the properties of localized interface optical-phonon modes (IOPM's) in triple-constitution semiconductor superlattices (SL's) with a structural defect layer. Numerical results reveal some interesting and novel properties of minigaps and localized IOPM's, substantially different from those of the conventional dual-constituent SL's. We also present a simple physical picture to interpret these properties.