A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia,Novosibirsk State University, Pirogova street, 2, 630090, Novosibirsk, Russia;
A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia;
A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia,Novosibirsk State University, Pirogova street, 2, 630090, Novosibirsk, Russia;
A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia;
A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia;
A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Lavrent'eva ave., 13, 630090, Novosibirsk, Russia,Novosibirsk State University, Pirogova street, 2, 630090, Novosibirsk, Russia;
Institute of Physics ASCR, v. v. i., Cukrovarnicka 10/112, 162 00 Praha 6, Czech Republic;
Institute of Physics ASCR, v. v. i., Cukrovarnicka 10/112, 162 00 Praha 6, Czech Republic;
Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 O_2 Praha 6, Czech Republic;
Institute of Physics ASCR, v. v. i., Cukrovarnicka 10/112, 162 00 Praha 6, Czech Republic;
Institute of Physics ASCR, v. v. i., Cukrovarnicka 10/112, 162 00 Praha 6, Czech Republic;
Hydrogenated amorphous silicon; p-i-n structures; Si and Ge nanocrystals; Raman scattering; electroluminescence; solar cells;
机译:基于非晶氢化硅的p-i-n结构的光学性质,其具有通过纳秒激光退火形成的硅纳米晶体
机译:p-i-n非晶硅薄膜太阳能电池结构中透明导电氧化物与氢化p型非晶碳化硅层的界面特性分析
机译:p-i-n非晶氢化硅结构中的b电致发光
机译:基于氢化的无定形硅基P-I-N结构,I层中的Si和Ge纳米晶体
机译:氢化非晶硅基p-i-n太阳能电池结构性能和稳定性的提高。
机译:SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
机译:Role of siNx Barrier Layer on the performances of polyimide Ga2O3-doped ZnO p-i-n Hydrogenated amorphous silicon Thin Film solar Cells
机译:添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告,1980年4月1日至1981年5月31日