A nanoelectronic device simulation software system NANODEV: New opportunities

摘要

The system NANODEV consists of three subsystems: SET-NANODEV for simulation of single-electron structures, RTS-NANODEV for simulation of resonant-tunneling structures, and QW-NANODEV for simulation of quantum wire devices. The new models of nanoelectronic devices on single-electron tunneling, resonant-tunneling effects have been included in the NANODEV system. In this paper we described results for RTD's based on GaAs/AlAs and InAs/AlSb/GaSb/AlSb/InAs which were obtained with the use of proposed two-band models of wave function formalism. It was shown that it is necessary to take into account many of factors for adequate simulation of these devices. Accounting of more complex band structure of investigated material systems on the basis of multiband models is one of the most important factor. Adequacy of the models is proved by comparison with experimental data. Physical models of single-electron devices with spatial quantization on islands were also proposed. It was shown that effect is important on IV-characteristics of devices not only for small islands but with increasing of number of islands, applied voltages and decreasing of temperature. The physical models allow to calculate single-electron transistor IV-characteristics depending on the structure sizes and parameters of materials. A good agreement of the results with the experimental data was obtained too.