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Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies

机译：现代CMOS技术中设计的辐射增强与电路级建模的总电离剂量效应

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Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.

机译：先前开发并由作者成功验证的总电离剂量（TID）效果的物理模型已嵌入到使用Verilog-A语言实现的BSIM3v3模型中。该工具与标准SPICE仿真器完全兼容，并允许在辐照期间考虑每个晶体管的电偏置条件。

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来源
《International conference on micro- and nano-electronics 2009 》|2009年|P.75211F.1-75211F.8|共8页
会议地点 Zvenigorod(RU)
作者
M.S. Gorbunov; G.I. Zebrev; P.N. Osipenko;
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作者单位

Scientific-Research Institute of System Analysis, Russian Academy of Sciences, Nakhimovskiy prosp. 36/1, Moscow, Russia;

rnMoscow Engineering Physics Institute (National Research Nuclear University), Kashirskoye shosse 31, Moscow, Russia, 115409;

rnScientific-Research Institute of System Analysis, Russian Academy of Sciences, Nakhimovskiy prosp. 36/1, Moscow, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类计算技术、计算机技术 ;
关键词
TID; BSIM3v3; SPICE; Verilog-A; CMOS; modeling; simulation;

机译：工业贸易署; BSIM3v3;香料; Verilog-A； CMOS;造型;模拟;

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专利

1. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies [J] . Hugh J. Barnaby, Michael Mclain, Ivan Sanchez Esqueda Nuclear Instruments & Methods in Physics Research . 2007 ,第1a2期

机译：现代CMOS技术中总电离剂量对隔离氧化物的影响
2. Total-Ionizing-Dose Effects in Modern CMOS Technologies [J] . Barnaby H. J. IEEE Transactions on Nuclear Science . 2006 ,第期

机译：现代CMOS技术中的总电离剂量效应
3. JICG CMOS transistors for reduction of total ionizing dose and single event effects in a 130 nm bulk SiGe BiCMOS technology [J] . R. Sorge, J. Schmidt, Ch. Wipf, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2021 ,第Jana21期

机译：JICG CMOS晶体管，用于在130nm散装SiGe Bicmos技术中减少总电离剂量和单一事件效果
4. Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies [C] . M.S. Gorbunov, G.I. Zebrev, R.N. Osipenko International Conference on Micro- and Nano-Electronics . 2010

机译：通过现代CMOS技术的总电离剂量效果的电路级模拟辐射硬化设计
5. Total ionizing dose effects in advanced CMOS technologies. [D] . Rezzak, Nadia. 2012

机译：先进CMOS技术中的总电离剂量效应。
6. Low-dose or low-dose-rate ionizing radiation–induced bioeffects in animal models [O] . Feng Ru Tang, Weng Keong Loke, Boo Cheong Khoo 2017

机译：低剂量或低剂量率电离辐射诱导的动物模型生物效应
7. Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad [O] . Mattiazzo, S, Bagatin, M., Bisello, D., 2017

机译：在高达1级的28 nm Hi-K金属栅CMOS技术上的总电离剂量效应

Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies

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