CoSi_2/TiO_2/SiO_2/Si gate structure formation

摘要

Recently investigations of the technologies using self-organization and phase layering occur more and more frequently. Considerable simplifications of processes, self-alignment of elements and reduction of stage quantity are the reasons of that. In this work we present results of computer simulation and experimental study of CoSi_2/TiO_2/SiO_2/Si gate structure formation technology which uses solid-phase diffusion and phase-layering. The bilayer of TiO_2 and SiO_2 was chosen as gate dielectric because titanium dioxide is possessed of extremely high dielectric permittivity and silicon dioxide has large band gap and high quality interface with Si. Because of its low resistivity CoSi_2 is considered now as one of the most prospective material for metal gate electrodes. The technology which was simulated in this work allows to form such a gate structure during the sole annealing process. To compute the technology parameters the program, which take into account diffusion properties of Co, Ti, Si and O was realized. Also the same structure was formed by rapid thermal oxidation and magnetron sputtering, with following rapid annealing. Simulation and experimental results show that the technology can be used for gate structure formation.