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MODIFICATIONS OF GaAs SURFACE UNDER Au EVAPORATING FLOW

机译:金蒸镀过程中GaAs表面的修饰

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摘要

Au films thermally deposited in vacuum differ from pure Au. New compounds, such as Au_3Ga, Au,Ga_2, are formed in this case, and Ga and As appear in the Au surface layer. In this work the GaAs surface state was investigated with surface acoustic waves in situ during thermal deposition of gold. The changes of the aggregate state caused by formation of the Au-Ga liquid phase followed by the creation of the solid solutions based on the Au_3Ga and the Au_7Ga_2 compounds are observed. Such transformations in the films seem to be determined by the diffusion of "free" (non-incorporated into the crystalline lattice) Ga and As atoms towards the GaAs surface due to the plastic deformation induced by the flow of thermally evaporated Au. Data is confirmed by the precise chemical analysis and Auger-spectroscopy.
机译:在真空中热沉积的金膜不同于纯金。在这种情况下,形成了新的化合物,例如Au_3Ga,Au,Ga_2,并且Ga和As出现在Au表面层中。在这项工作中,利用金的热沉积过程中的原位表面声波研究了GaAs的表面状态。观察到由于形成Au-Ga液相并随后基于Au_3Ga和Au_7Ga_2化合物形成固溶体而引起的聚集态变化。薄膜中的这种转变似乎是由“自由”(未结合到晶格中)Ga和As原子向GaAs表面的扩散所决定的,这归因于热蒸发的Au流动引起的塑性变形。数据通过精密的化学分析和俄歇光谱法确认。

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