首页> 外文期刊>Applied Surface Science >GaAs surface modifications under Au evaporating flux
【24h】

GaAs surface modifications under Au evaporating flux

机译:Au蒸发通量下的GaAs表面改性

获取原文
获取原文并翻译 | 示例
           

摘要

Au films thermally evaporated in vacuum are different from pure Au. New compounds as Au3Ga, Au7Ga2 are formed during the evaporation and "free" (non-incorporated into the crystalline lattice) Ga and As atoms appear in the Au surface layer. In this work the GaAs surface state was investigated with surface acoustic waves in situ during thermal evaporation of Au. The changes of the aggregate state caused by the Au-Ga liquid phase formation followed by the creation of the solid solutions based on the Au3Ga and the Au7Ga2 compounds are observed. Such transformations in the films seem to be determined by the diffusion of "free" Ga and As atoms towards the GaAs surface due to the plastic deformation induced by the Au evaporated flux. Data were confirmed by the precise chemical analysis and Auger electron spectroscopy. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 10]
机译:在真空中热蒸发的金膜不同于纯金。新化合物如Au3Ga,Au7Ga2在蒸发过程中形成,并且“自由”(未结合到晶格中)Ga和As原子出现在Au表面层中。在这项工作中,利用Au热蒸发过程中的表面声波对GaAs表面状态进行了研究。观察到由Au-Ga液相形成引起的聚集态变化,然后形成了基于Au3Ga和Au7Ga2化合物的固溶体。薄膜中的这种转变似乎是由“自由”的Ga和As原子由于Au蒸发通量引起的塑性变形而向GaAs表面的扩散所决定的。数据通过精确的化学分析和俄歇电子能谱确认。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:10]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号