The Effect of a Low-Energy Electron Beam and Evaporated Gold Flux on GaAs Surface Content

摘要

This work studies changes of the GaAs surface state under the effect of low-intensity electron flux and under the effect of weakly ionized plasma (evaporated Au vapors in vacuum). It is shown that the structure and composition of subsurface layers not only within the irradiated region, but also beyond it, changes even under weak exposure. It is found that the content of free Ga and As atoms not included into the gallium arsenide lattice decreases under irradiation of the GaAs surface, which is characteristic for the processes of plastic deformation relaxation. Removal of strain due to diffusion creep is determined by torsional deformation. Diffusion and viscosity coefficients under irradiation by electrons point to the bulk diffusion mechanism and to the grain boundary mechanism under Au deposition. Herewith, the state of the subsurface layer corresponds to the irradiation duration. The energy parameters of this process are estimated.