Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide

摘要

In this work, the effect of hydrogen peroxide (H2O2) on the biased radiation stress (BRS) and biased illumination stress (BIS) stability of solution-processed AlOx thin films were investigated. It is found that the BRS and BIS stabilities, as well as the leakage behavior were significantly improved through employing H2O2 in the solution-process. Through the TGA-DSC analysis of the precursor powder with and without the presence of H2O2, we assumed that H2O2 effectively reduced the oxygen vacancy defect density by strong oxidation and minimizes defects by eliminating the impurities at lower temperatures compared to a conventional solution process.