LARGE CYCLOTRON-RESONANCE LINE SPLITTING OF TWO-DIMENSIONAL ELECTRONS IN AlGaN/GaN AND AlGaAs/GaAs HETEROSTRUCTURES

摘要

Large cyclotron-resonance (CR) line splittings have been observed previously in two-dimensional (2D) electrons in AlGaN/GaN and in GaAs/AlGaAs heterojunctions. The features resemble a level anti-crossing and imply a strong interaction with an unknown excitation of the solid. The origin of this phenomenon remains unexplained. This paper reviews the existing data and presents some recently detected correlations of the splitting with other sample parameters.