PHOTO-EXCITED ZERO-RESISTANCE STATES IN THE GaAs/AlGaAs SYSTEM

摘要

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of B = [4/(4j + l)]B_f, where B_f = 2πfm~*/e, m~* is an effective mass, e is the charge, and/ is the microwave frequency. Here, we summarize some experimental results.