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A Multi-level Elaborate Least Frequently/Recently Used Buffer Cache for Flash Storage Systems

机译:用于闪存系统的多级精心设计的最少/最近/最近使用的缓冲区高速缓存

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This research is to design a new buffer cache for flash memory storage systems. Specifically, flash memory based storage systems are compact and fast, compared with the traditional hard disks. Eventually, flash memory based solid state disks (SSDs) became another attractive storage unit, to be applied to general computing systems. However, flash memory based SSDs show critical drawbacks that stem from the unique characteristics of the electronic storage units, incurring huge overhead. Especially these drawbacks cause serious performance problem when the access pattern of overwrite operations is irregular. This is mainly because the irregular access pattern increases the frequency of overwrite operations and merge operations in the flash memory, which may cause serious overhead. In order to reduce such overhead, this paper proposes a new buffer cache, called the ML-ELFRU (Multi-Level Elaborate Least Frequently/Recently Used Buffer), for a flash translation layer (FTL) in flash memory storages or SSDs. Additionally, experiments are carried out to show that the ML-ELFRU can reduce the number of replacement operations in the buffer cache and the number of merge operations in the electronic storage unit compared with other existing buffer cache policies.
机译:这项研究旨在为闪存存储系统设计一种新的缓冲区高速缓存。特别地,与传统硬盘相比,基于闪存的存储系统紧凑且快速。最终,基于闪存的固态磁盘(SSD)成为了另一个有吸引力的存储单元,将被应用到通用计算系统中。然而,基于闪存的固态硬盘显示出严重的缺陷,这些缺陷源于电子存储单元的独特特性,从而产生了巨大的开销。尤其是当重写操作的访问模式不规则时,这些缺点会导致严重的性能问题。这主要是因为不规则访问模式增加了闪存中重写操作和合并操作的频率,这可能会导致严重的开销。为了减少此类开销,本文针对闪存存储或SSD中的闪存转换层(FTL)提出了一种新的缓冲区缓存,称为ML-ELFRU(多层精心设计的最不常用/最近使用的缓冲区)。另外,进行实验表明,与其他现有的缓冲区高速缓存策略相比,ML-ELFRU可以减少缓冲区高速缓存中的替换操作数和电子存储单元中的合并操作数。

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