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Maximum Scratch Width in Chemical-Mechanical Polishing

机译:化学机械抛光的最大划痕宽度

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摘要

This paper presents lower- and upper-limits to the width and depth of scratches in CMP. First, single-particle models that use elastic and plastic analyses for the lower- and upper-bound loads are summarized [1]. Then, multi-particle models are presented for the elastic and plastic deformation of the pad asperities. These models use contact mechanics at the pad/particle and particle/coating interfaces to relate the global CMP parameters (pressure, particle radius, slurry volume fraction, and the mechanical and geometrical properties of the pad and the coating) to the width and depth of scratches. Using these models, lower- and upper-limits for the scratch width and depth are established. The upper-limit for the semi-width of a scratch is the product of the particle radius and the square-root of the ratio of pad hardness to coating hardness. For typical CMP pads and coatings, this upper-limit is one-fifth of the particle radius. Additionally, polishing experiments have been conducted to preliminarily validate the limits. Finally, based on the models and the experiments, practical solutions for mitigating scratching in CMP, especially low-k CMP, are suggested.
机译:本文介绍了CMP划痕的宽度和深度的上限和下限。首先,总结了使用弹性和塑性分析的上下限载荷的单粒子模型[1]。然后,提出了针对垫块粗糙体的弹性和塑性变形的多粒子模型。这些模型在垫/颗粒和颗粒/涂层界面使用接触力学,将全局CMP参数(压力,颗粒半径,浆液体积分数以及垫和涂层的机械和几何特性)与涂层的宽度和深度相关联。划痕。使用这些模型,可以确定划痕宽度和深度的上限和下限。划痕的半宽度的上限是颗粒半径与衬垫硬度与涂层硬度之比的平方根的乘积。对于典型的CMP垫和涂层,此上限为粒子半径的五分之一。另外,已经进行抛光实验以初步验证极限。最后,基于模型和实验,提出了减轻CMP(特别是低k CMP)刮擦的实用解决方案。

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