Properties of Si:Cr Annealed under Enhanced Stress Conditions

摘要

The effect of hydrostatic argon pressure equal to 10~5 Pa and 1.1 GPa applied to processing at up to 1270 K (HT) of Si:Cr samples prepared by Cr~+ implantation (dose 1 × 10~(15) cm~(-2), 200 keV) into (001) oriented Czochralski silicon, has been investigated by Secondary Ion Mass Spec-trometry, photoluminescence, X-ray and SQUID methods. Cr~+ implantation at this energy and dosage produces amorphous silicon (a-Si) near the implanted ions range. Solid phase epitaxial re-growth (SPER) of a-Si takes place at HT. The Cr profile does not depend markedly on HP applied during processing at 723 K. Si:Cr processed at up to 723 K indicates magnetic ordering. Annealing under 105 Pa at 873 K, 1070 K and 1270 K results in a marked diffusion of Cr toward the sample surface. In the case of processing under 1.1 GPa this diffusion is less pronounced, SPER of a-Si is retarded and the a-Si/Si interface becomes enriched with Cr. The Cr concentration in Si:Cr sample processed at 1270 K under 1.1 GPa forms two distinct maxima, the deeper one at 0.35 μm depth.