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Challenges and Solutions for 450mm FEOL Wet Clean Tool

机译:450mm FEOL湿清洁工具的挑战和解决方案

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摘要

Wafer size transition from 300mm to 450mm has been started to address the higher manufacturing cost issue. Major challenges for front end of line (FEOL) clean are listed. From preliminary results, cleanness and etching uniformity are very positive with comparable or even better particle adder performance. Pattern collapse and damage become more and more critical to advanced technology node, but currently they couldn't be tested due to the lack of 450mm pattern wafer. For 450mm wafer recycling, it will be done in single wafer processing tool instead of batch tool, good results in terms of short process time and low surface roughness were obtained on SiO_2 and Si_3N_4 recycling wafers. Same as 300mm, single wafer processing tool for Si_3N_4 wet etching is requested.
机译:晶圆尺寸从300毫米过渡到450毫米已开始解决更高的制造成本问题。列出了生产线前端(FEOL)清洁的主要挑战。从初步结果来看,清洁度和蚀刻均匀性非常可观,具有相当甚至更好的颗粒添加性能。图案崩溃和损坏对于先进技术节点越来越重要,但是由于缺少450mm图案晶片,目前无法对其进行测试。对于450mm晶圆回收,将在单个晶圆加工工具而不是批处理工具中完成,在SiO_2和Si_3N_4回收晶圆上,可在较短的处理时间和较低的表面粗糙度方面取得良好的效果。与300mm一样,需要用于Si_3N_4湿法蚀刻的单晶片加工工具。

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