The Integrated Modeling of Semiconductor Stabilitrons

摘要

Results of modeling of semiconductor stabilitrons which basis two program environments are are given: OrCAD (circuitry) and Synopsys TCAD Sentaurus (technology). At a stage of circuitry modeling behavioral models of semiconductor stabilitrons which allow to submit more precisely their volt-ampere characteristics in comparison with SPISE models are investigated. Schemes of behavioral models a component included standard SPICE components of the program OrCAD environment such as passive elements, semiconductors, the operated sources of current and tension. For technological modeling compact models of semiconductor structures in the environment of Synopsys TCAD Sentaurus on the basis of the results of circuitry modeling or measurements of the concrete device reflecting dependence of output electro physical parameters on dispersion of initial technological parameters are constructed. Integration of modeling tools will improve technical characteristics, increase reliability and minimize the space occupied on a crystal. The results of modeling of an optimum technological route and characteristics of semiconductor stabilitrons confirming the received results on behavioral models are given.