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Manipulation of strain effect on optical anisotropy inself-assembled InGaAs quantum dots

机译:应变对光学各向异性自组装InGaAs量子点的影响

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Strain effect on optical anisotropy is studied by polarization analysis ofphotoluminescence from self-assembled InGaAs quantum dots embedded in wire (“monorail”)and freestanding wire (“air-bridge”) structures. Strong optical anisotropy is observed in thequantum dots embedded in monorails although such an anisotropy is absent in the as-growndots. The optical anisotropy is mainly attributed to strain asymmetry, which is consistent withthe observation of a doublet fine structure polarized parallel and perpendicular to the monorail.By changing the monorail into an air-bridge, the strain symmetry is partially restored, whichmanifests as a reduction of the optical anisotropy.
机译:通过对嵌入导线(“单轨”)和独立导线(“空气桥”)结构中的自组装InGaAs量子点的光致发光进行极化分析,研究了应变对光学各向异性的影响。在单轨中嵌入的量子点中观察到强的光学各向异性,尽管这样的各向异性在生长的点中不存在。光学各向异性主要归因于应变不对称性,这与观察到平行于并垂直于单轨的双峰精细结构相一致,通过将单轨改变为空气桥,应变对称性得以部分恢复,这表明降低了光学各向异性。

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  • 会议地点 Edinburgh(GB);Edinburgh(GB)
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    Institute of Industrial Science University of Tokyo;

    Research Center for Advanced Science and Technology University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan;

    Institute of Industrial Science University of Tokyo Research Center for Advanced Science and Technology University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan;

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