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Electronic Structure of Quantum-Dot Quantum-WellSemiconductor Heterostructures

机译:量子点量子阱半导体异质结构的电子结构

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We analyse semiconductor quantum-dot quantum-well (QDQW)heterostructures. Using the nonsymmetrized 8-band effective-mass model,electron, hole and exciton states are described in CdS/HgS/CdS/H2O andCdTe/HgTe/CdTe/H2O QDQWs. The exciton energy spectrum has beenobtained taking into account both Coulomb and spin-exchange interactions.The optical absorption spectra of the QDQWs calculated using ournonadiabatic theory are compared to those obtained within the adiabaticapproximation. It is seen that, within the nonadiabatic theory, phononassistedcontributions to the absorption spectrum are substantially enhancedas compared to those given by the adiabatic approximation.
机译:我们分析半导体量子点量子阱(QDQW)异质结构。使用非对称的8波段有效质量模型,在CdS / HgS / CdS / H2O和CdTe / HgTe / CdTe / H2O QDQWs中描述了电子,空穴和激子态。已经考虑了库仑和自旋交换相互作用获得了激子能谱。将使用我们的非绝热理论计算的QDQW的吸光光谱与绝热近似中获得的光谱进行了比较。可以看出,在非绝热理论中,与绝热逼近相比,声子对吸收光谱的贡献大大提高了。

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  • 会议地点 Edinburgh(GB);Edinburgh(GB)
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    TFVS Universiteit Antwerpen (UIA) B-2610 Antwerpen Belgium FSM Universitatea de Stat din Moldova MD-2009 Chisinau Moldova;

    TFVS Universiteit Antwerpen (UIA) B-2610 Antwerpen Belgium Universiteit Antwerpen (RUCA) B-2020 Antwerpen Belgium Technische Universiteit Eindhoven 5600 MB Eindhoven The Netherlands;

    FSM Universitatea de Stat din Moldova MD-2009 Chisinau Moldova;

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