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New results on the origin of the emission from type-Ⅱquantum dots using micro-photoluminescence

机译:利用微光致发光的Ⅱ型量子点发射起源的新结果

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We studied type-Ⅱ InP/ GaAs self-assembled quantum dots by micro- microphotoluminescencespectroscopy. Sharp spectral features were observed on topphotoluminescence of a broad emission band. They are associated to exciton emission lines inindividual dots belonging to an ensemble with statistical fluctuations of dotsizes. Photoluminescence measurements as a function of the excitationintensity revealed markedly distinct behaviors: the broad band contour shows alarge blue shift while the energy positions of the sharp features remainbasically constant. We have strong evidence that the large blue shift of thebroad emission band in type-Ⅱ quantum dots is not due to the band-bendingeffect, but to the filling of higher energy states.
机译:我们通过微-微光致发光光谱学研究了Ⅱ型InP / GaAs自组装量子点。在宽发射带的顶部光致发光上观察到尖锐的光谱特征。它们与属于集合的单个点的激子发射线相关联,点大小的统计波动很大。作为激发强度的函数的光致发光测量显示出明显不同的行为:宽带轮廓显示出大的蓝移,而尖锐特征的能量位置基本保持恒定。我们有充分的证据表明,Ⅱ型量子点中宽发射带的大蓝移不是由于能带弯曲效应,而是由于高能态的填充。

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