Tapping Mode Capacitance Microscopy of a Nitride-Oxide-Silicon Recording Medium

摘要

We have observed data bits recorded in a nitride-oxide-silicon (NOS) medium by the tapping mode capacitance microscopy. Tapping mode capacitance microscopy makes it possible to observe capacitance variations in the NOS medium with high sensitivity. The capacitive contrast and patterns of written bits are investigated. It is found that in some regions of the medium the capacitive contrast gets degraded due to unwanted depletion. A novel technique for improving the capacitive contrast is presented.