Non-tunneling origin of the 1/f noise in SiC MOSFET

摘要

It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of bulk traps in the gate oxide near the interface. The tunneling nature is a key concept upon which the technique of trap profiling using 1/f noise is based on. In this work, we examine the tunneling pathways in SiC MOSFETs and show that the 1/f noise observed in SiC MOSFETs is likely of a completely different nature involving above band edge interface states that do not require tunneling to capture the inversion charge.