A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT

摘要

We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=-1.42. The followed experimental results showed that the γ value can reach up to -2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.