Investigation of DX Center Effect on 2DEG Density in Si δ-Doped Al_xGa_(1-x)As/GaAs Heterostructure

摘要

The DX centers effect on the electron gas density in δ-doped AlGaAs/GaAs heterostructure is analyzed using a quantum model based on a Self-Consistent solution of Poisson and Schrodinger equations. A DX center model is considered assuming Fermi-Dirac statistics with Aluminum mole fraction dependence of the deep-donor energy level. The results reveal that a decrease in the sheet electron density is caused by the presence of DX center. Furthermore, the pseudomorophic AlGaAs/InGaAs/GaAs heterostructure is also investigated in the DX center model. The Control Volume Method is used to discretize the governing equations.