Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry

摘要

The Rutherford backscattering spectrometry (RBS) technique was employed for the growth investigation of Ti-rich interface layers in the annealed Cu(Ti) dielectric-layer . Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be appropriate method for the growth analysis of the Ti-rich interface layers.