Atomic layer deposition of copper thin film using Cu^II(diketoiminate)2 and H2

摘要

We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to Cu^II(diketoiminate)₂ and H₂. The influences of deposition temperature on the properties of the deposited film were investigated at 140-220degC. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180-200degC. The resistivity of 17-nm-thick ALD Cu film was ~7 muOmegamiddotcm.