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Fourier analysis determination of best focus in submicron lithography

机译:傅立叶分析确定亚微米光刻最佳焦点

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Abstract: In the development and manufacture of integrated circuits, as requirements push closer to the theoretical (Rayleigh) limit of performance, depth of focus decreases as resolution is increased. The advent of easily accessible tools for image processing suggest that a quantitative determination of best focus is possible. Workers in this laboratory have developed a technique for determining `best focus' using 2-D Fourier power spectra of SEM images of exposed patterns. From this a `figure of merit' is extracted by assuming that what is desired is to maximize orthogonal edges (from `as-drawn' features) and minimize intermediate features (edge rounding). This has been shown to provide a quantitative value that is consistent with an `expert' assessment of the same images. The system is consistent with automation of the process, eliminating the need to record hard-copy images for `expert' evaluation. !2
机译:摘要:在集成电路的开发和制造中,由于要求越来越接近理论上的性能(Rayleigh)极限,因此焦点深度随分辨率的提高而降低。易于使用的图像处理工具的出现表明,可以对最佳焦点进行定量确定。该实验室的工作人员已经开发出一种技术,该技术使用曝光图案的SEM图像的二维傅立叶功率谱确定“最佳焦点”。通过假设期望的是最大化正交边缘(来自“绘制的”特征)并最小化中间特征(边缘舍入),从中提取出“品质因数”。已显示这提供了与相同图像的“专家”评估相一致的定量值。该系统与流程自动化相一致,无需记录硬拷贝图像以进行“专家”评估。 !2

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