SiC reversely switched dynistor (RSD) for pulse power application

摘要

This paper reports the world's first SiC reversely switched dynistor (RSD) work. The device structure of 1200V SiC RSD is designed. The two-dimensional numerical model of SiC RSD is established with full consideration of the SiC material parameters and the important physical effects in power device. The blocking characteristics and turn-on characteristics are simulated. The operation principle based on the turn-on controlled by the reverse plasma injection is explained. The influence factors on the switching performance, especially on the residual voltage, including the device parameters and the external conditions, are discussed. The experiment reports the high di/dt pulse output acquired recently based on Si RSD integrated module. The di/dt of 8.85kA/μs is acquired at 1500V discharge voltage, with the peak current of 3.7kA.