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Micromechanical Silicon Microbalance

机译:微机械硅微量天平

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摘要

A micromachined capacitive silicon microbalance has been designed and fabricated. It is intended for weighing masses of the order of 1 g with a resolution and accuracy of about 1 ug. The device consists of a micromachined SOI (silicon-on-insulator) chip which is anodically bonded to a glass plate. The capacitance is formed between two electrodes. The flexible electrode is the SOI layer. The other electrode is metal layer on the glass. The glass electrode is divided into three sections. The sections are used for detecting the tilting of the top electrode due to eccentric loading. The measuring circuit implements electrostatic force feedback which keeps the top electrode at a constant horizontal position irrespective of the mass of the load. First test measurements have demonstrated that an accuracy of about 2 to 3 μg at 1 g can be reached.
机译:已经设计和制造了一种微加工的电容硅微量天平。它用于称量1 g量级的质量,分辨率和精度约为1 ug。该设备由一个微机械加工的SOI(绝缘体上硅)芯片组成,该芯片阳极结合到玻璃板上。电容形成在两个电极之间。柔性电极是SOI层。另一个电极是玻璃上的金属层。玻璃电极分为三部分。这些部分用于检测由于偏心负载导致的顶部电极的倾斜。测量电路实现静电力反馈,该静电力将顶部电极保持在恒定的水平位置,而与负载的质量无关。首次测试测量结果表明,在1 g时可以达到约2至3μg的精度。

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