首页> 外文会议>IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain >Evaluation of DirectFET? Flip Chip Packaging Technology, Lead and Indium Solder Alloys in Extreme Cold Thermal Environments
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Evaluation of DirectFET? Flip Chip Packaging Technology, Lead and Indium Solder Alloys in Extreme Cold Thermal Environments

机译:评估DirectFET?极端寒冷热环境下的倒装芯片封装技术,铅和铟焊料合金

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DirectFET? packaging technology, developed by International Rectifier Corporation, offers substantial improvements in thermal and power efficiencies for power MOSFETs while also reducing device form factor. The use of these devices in space applications could serve to significantly extend mission life by reducing power consumption onboard satellites, deep space probes and planetary rovers. Further thermal and power efficiencies could also be reaped by mounting the power electronics with a thermal conduction path to the spacecraft body. However, exposure to the extreme temperatures in these environments has deleterious effects on some electronics assembly integrity and reliability and has to date, kept electronic hardware within the thermally regulated interior of the spacecraft. To evaluate the effects of these environments on electrical performance and reliability, several sets of DirectFET?? assemblies were fabricated using a variety of lead and indium solder alloys and subjected to temperature cycling. The testing sought to simulate three extreme thermal environments: the "high reliability" environment (-65℃ to +150℃), the Mars environment (-120℃ to +115℃) and the Deep Space environment (-180℃ to +85℃). Results of electrical testing, cross-sectional analyses, and thermomechanical stress simulations are presented within this article.
机译:DirectFET?由国际整流器公司(International Rectifier Corporation)开发的封装技术在功率MOSFET的热效率和功率效率方面取得了显着改善,同时还减小了器件的尺寸。在太空应用中使用这些设备可以通过减少机载卫星,深空探测器和行星漫游车的功耗来显着延长任务寿命。通过将功率电子器件安装到航天器主体的热传导路径,也可以提高热效率和功率效率。但是,在这些环境中暴露于极端温度下会对某些电子组件的完整性和可靠性造成不利影响,并且迄今为止,电子硬件一直都在航天器的受热调节内部。为了评估这些环境对电气性能和可靠性的影响,使用了几套DirectFET?组件使用多种铅和铟焊料合金制造,并经受温度循环。该测试试图模拟三种极端热环境:“高可靠性”环境(-65℃至+ 150℃),火星环境(-120℃至+ 115℃)和深空环境(-180℃至+85) ℃)。本文介绍了电气测试,横截面分析和热机械应力模拟的结果。

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